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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2280-2282

340 nm-band high-power InAlGaN quantum well ultraviolet light-emitting diode using p-type InAlGaN layers

(4) Fujikawa, Sachie a Takano, Takayoshi a,b Kondo, Yukihiro b Hirayama, Hideki a,c

a RIKEN (Japan)

b PANASONIC CORPORATION (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN LAYERS; BLOCKING LAYERS; CW OPERATION; ELECTRON OVERFLOW; EMISSION WAVELENGTH; EXTERNAL QUANTUM EFFICIENCY; HIGH EFFICIENCY; HIGH-POWER; INALGAN; MAXIMUM OUTPUT POWER; METALORGANIC CHEMICAL VAPOR DEPOSITION; MG-DOPED; MULTIQUANTUM WELLS; OUTPUT POWER; P-TYPE; QUANTUM WELL; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; ULTRAVIOLET LIGHT-EMITTING DIODES; ULTRAVIOLET LIGHTS;

HOLE CONCENTRATION; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); SECONDARY BATTERIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET RADIATION;

QUANTUM EFFICIENCY;

EID: 65349171186 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200778687 Document Type: Conference Paper

Times cited : (9)

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