SCOPUS 정보 검색 플랫폼

Volumn 1, Issue 5, 2008, Pages 0511011-0511013

227 nm AlGaN light-emitting diode with 0.15 mW output power realized using a thin quantum well and AIN buffer with reduced threading dislocation density

(4) Hirayama, Hideki a,c Noguchi, Norimichi a,b,c Yatabe, Tohru a,b,c Kamata, Norihiko b,c

a INST OF PHYS AND CHEMICAL RESEARCH (Japan)

b SAITAMA UNIVERSITY (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; LIGHT EMISSION; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES;

AIN BUFFERS; ALGAN QUANTUM WELLS; EMISSION PEAKS; INJECTION CURRENTS; LIGHT EMITTING DIODE LEDS; MAXIMUM EXTERNAL QUANTUM EFFICIENCIES; MULTI QUANTUM WELLS; MW OUTPUTS; OUTPUT POWERS; PULSED OPERATIONS; ROOM TEMPERATURES; SAPPHIRE SUBSTRATES; THIN QUANTUM WELLS; THREADING DISLOCATION DENSITIES; ULTRA VIOLETS;

LIGHT EMITTING DIODES;

EID: 57049175148 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.1.051101 Document Type: Article

Times cited : (61)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.