Removal of thick (>100 nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching

Applied Physics Letters

Volumn 85, Issue 5, 2004, Pages 762-764

  Haberer, E D ^a   Sharma, R ^a   Stonas, A R ^a   Nakamura, S ^a   Denbaars, S P ^a   Hu, E L ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONFINEMENT; PHOTOELECTROCHEMICAL (PEC) ETCHING; PHOTONIC CRYSTAL MEMBRANES; PIEZOELECTRIC FIELDS;

CARRIER CONCENTRATION; DIFFUSION; ELECTROCHEMISTRY; ELECTROLYTES; ENERGY GAP; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL DEVICES; PHOTOCHEMICAL REACTIONS; PIEZOELECTRICITY; POLARIZATION; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR SUPERLATTICES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 4344679116     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1776615     Document Type: Article

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