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Volumn 96, Issue 11, 2004, Pages 6925-6927

Optimization of AlGaN/GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching

Author keywords

[No Author keywords available]

Indexed keywords

DOPING LAYER; HOLE CONFINEMENT; SURFACE TRAPS; UNDERCUT ETCHING;

BAND STRUCTURE; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRONS; ETCHING; HOLE MOBILITY; PHOTOELECTRICITY; POLARIZATION; SILICON;

ALUMINUM COMPOUNDS;

EID: 28044445509 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1806281 Document Type: Article

Times cited : (31)

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