Effect of phosphonic acid surface modifiers on the work function of indium tin oxide and on the charge injection barrier into organic single-layer diodes

Journal of Applied Physics

Volumn 105, Issue 7, 2009, Pages

  Sharma, Asha ^a   Haldi, Andreas ^a   Hotchkiss, Peter J ^b   Marder, Seth R ^b   Kippelen, Bernard ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE INJECTION BARRIERS; EQUIVALENT CIRCUIT MODELS; HIGHEST OCCUPIED MOLECULAR ORBITALS; INDIUM TIN OXIDES; MEASURED CURRENTS; ORGANIC MATERIALS; PENTACENE; PHOSPHONIC ACIDS; SINGLE LAYERS; SURFACE MODIFIERS;

AMINES; CHARGE INJECTION; DIODES; INDIUM; MOLECULAR ORBITALS; ORGANIC ACIDS; PHOTOLITHOGRAPHY; SURFACES; THERMIONIC EMISSION; TIN; TITANIUM COMPOUNDS; WORK FUNCTION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 65249098247     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3095490     Document Type: Article

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