Structural, optical and magnetic properties of Ga1-xMn xN films grown by MOCVD

Journal of Physics D: Applied Physics

Volumn 41, Issue 24, 2008, Pages

  Yang, X L ^a   Chen, Z T ^a   Zhao, L B ^a   Zhu, W X ^a   Wang, C D ^a   Pei, X D ^a   Zhang, G Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS INDUCED; HEAVILY DOPED; MN-DOPING; MOCVD; VALENCE BAND STRUCTURES; X-RAY PHOTOELECTRON SPECTROSCOPIES; XPS;

CHEMICAL VAPOR DEPOSITION; DEFECTS; DOPING (ADDITIVES); GALLIUM NITRIDE; MAGNETIC PROPERTIES; MANGANESE; MANGANESE COMPOUNDS; METALLIC FILMS; SEMICONDUCTING GALLIUM;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 65249085578     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/24/245004     Document Type: Article

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