Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN:Mg Interface

Applied Physics Letters

Volumn 85, Issue 17, 2004, Pages 3809-3811

  Arkun, F E ^a   Reed, M J ^a   Berkman, E A ^a   El Masry, N A ^a   Zavada, J M ^b   Reed, M L ^a   Bedair, S M ^a  

^a North Carolina State University   (United States)

^b U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP BARRIERS; CARRIER TRANSFER; DENSITY OF STATES (DOS); VALENCE BANDS;

CHEMICAL VAPOR DEPOSITION; FERMI LEVEL; FERROMAGNETIC MATERIALS; HETEROJUNCTIONS; MAGNETIC SEMICONDUCTORS; SECONDARY ION MASS SPECTROMETRY; SILICON; SQUIDS;

GALLIUM COMPOUNDS;

EID: 9744268183     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1810216     Document Type: Article

References (5)

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3. S. J. Pearton, C. R. Abernathy, M. E. Overberg, G. T. Thaler, D. P. Norton, N. Theodoropoulou, A. F. Hebard, Y. D. Park, F. Ren, J. Kim, and L. A. Boatner, J. Appl. Phys. 93, 1 (2003).
4. L. Kronik, M. Jain, and J. R. Chelikowsky, Phys. Rev. B 66, 041203 (2002).
5. Y. Korotkov, J. M. Gregie, and B. W. Wessels, Appl. Phys. Lett. 80, 1731 (2001).