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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 8 A, 2004, Pages 5151-5156

Characterization of carrier concentration and mobility in n-type SiC wafers using infrared reflectance spectroscopy

(5) Narita, Katsutoshi a Hijikata, Yasuto a Yaguchi, Hiroyuki a Yoshida, Sadafumi a,b Nakashima, Shinichi b

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

Carrier concentration; Drift mobility; Electrical properties; Hall measurement; Hall mobility; Infrared reflectance; SiC

Indexed keywords

CARRIER CONCENTRATION; EVAPORATION; FABRICATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED SPECTROSCOPY; LIGHT SOURCES; OPTICAL BEAM SPLITTERS; PERMITTIVITY; PHONONS; REFLECTION; SURFACE ROUGHNESS;

DRIFT MOBILITY; ELECTRICAL PROPERTIES; HALL MEASUREMENT; HALL MOBILITY; INFRARED REFLECTANCE;

SILICON CARBIDE;

EID: 6444243848 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.5151 Document Type: Article

Times cited : (34)

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