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International Journal of Modern Physics B

Volumn 16, Issue 1-2, 2002, Pages 151-158

Surface and interface properties of ion implanted 4H-silicon carbide

(4) Feng, Z C b Lin, J a Yan, F c Zhao, J H c

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b Axcel Photonics Inc (United States)

c RUTGERS UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CARBON; SILICON CARBIDE;

CONFERENCE PAPER; CRYSTAL STRUCTURE; FOURIER TRANSFORMATION; HIGH TEMPERATURE PROCEDURES; IMPLANT; INFRARED RADIATION; OPTICS; RAMAN SPECTROMETRY; SIMULATION; STRUCTURE ANALYSIS; SURFACE PROPERTY; THEORY; ULTRAVIOLET RADIATION;

EID: 0037138061 PISSN: 02179792 EISSN: None Source Type: Journal
DOI: 10.1142/s0217979202009585 Document Type: Conference Paper

Times cited : (3)

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