Characterization of electrical properties in high-dose implanted and post-implantation-annealed 4H-SiC wafers using infrared reflectance spectroscopy

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 905-908

  Narita, N ^a   Hijikata, Y ^a   Yaguchi, H ^a   Yoshida, S ^a,b   Senzaki, J ^b   Nakashima, S ^b  

^a SAITAMA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

4H SiC; Activation anneal; Carrier concentration; Crystalline damage; Hall measurements; Infrared reflectance spectroscopy; Ion implantation; Mobility

Indexed keywords

ACTIVATION ANALYSIS; ALUMINUM; ANNEALING; CARRIER CONCENTRATION; ELECTRIC CONTACTS; HALL EFFECT; ION IMPLANTATION; RAMAN SCATTERING;

4H-SIC; ACTIVATION ANNEAL; CRYSTALLINE DAMAGE; INFRARED REFLECTANCE SPECTROSCOPY;

SILICON CARBIDE;

EID: 6444226901     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.905     Document Type: Conference Paper

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