Optical investigation of residual doping species in 6H and 4H-SIC layers grown by chemical vapor deposition

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 253-257

  Neyret, E ^a,b   Ferro, G ^b   Juillaguet, S ^a   Bluet, J M ^b,c   Jaussaud, C ^b   Camassel, J ^a  

^a CNRS   (France)

^b CEA LETI   (France)

^c Grenoble INP Phelma   (France)

Author keywords

CVD growth; Photoluminescence; Residual doping; SiC; Susceptor purity

Indexed keywords

RESIDUAL DOPING;

ALUMINUM; CHEMICAL VAPOR DEPOSITION; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; GRAPHITE; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

SILICON CARBIDE;

EID: 0032634138     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00513-3     Document Type: Article

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