Optical characterization of ion-implanted 4H-SiC

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 647-650

  Feng, Z C ^a   Yan, F ^b   Chang, W Y ^c   Zhao, J H ^b   Lin, J ^c  

^a Axcel Photonics Inc   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

4H SiC; Al C ions; Annealing; Crystallization; FTIR; Multi energy implantation; Optical transmission; Photoluminescence; Raman scattering

Indexed keywords

AMORPHIZATION; ANNEALING; CRYSTALLIZATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; LIGHT TRANSMISSION; PHOTOLUMINESCENCE; RAMAN SCATTERING; ALUMINUM COMPOUNDS; CHROMIUM COMPOUNDS; HEAVY IONS; SILICON CARBIDE; THALLIUM COMPOUNDS;

AL-C IONS; MULTI ENERGY IMPLANTATION; RECRYSTALLIZATION; 4H-SIC; AMORPHOUS LAYER; CO-IMPLANTATION; FTIR; HIGH-TEMPERATURE ANNEALING; MICRO-RAMAN SCATTERING; MULTI ENERGY; OPTICAL CHARACTERIZATION;

SILICON CARBIDE; FLUORINE COMPOUNDS;

EID: 2142784455     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.647     Document Type: Article

References (4)

1. Kiyoshi Tone and Jian H. Zhao, IEEE Transactions on Electron Devices Vol. 46 (1999), p. 612.
2. Z. C. Feng, S. J. Chua, K. Tone, and J. H. Zhao, Appl. Phys. Lett. Vol. 75 (1999), p. 472.
3. W. Y. Chang, Z. C. Feng, J. Lin, F. Yan and J. H. Zhao, Intern. J. of Modern Phys. B, in press.
4. S. Nakashima and H. Harima, in W. J. Choyke, H, Matsunami, and G. Pensl, ed., Fundamental Questions and Applications of SiC (Part II), Phys. Status Solidi (a) Vol. 162 (1997) 39.