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Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 859-862

Infrared investigation of implantation damage in 6H-SiC

(6) Camassel, J a Wang, H Y a Pernot, J a Godignon, P b Mestres, N c Pascual, J d

a CNRS (France)

b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA (Spain)

c INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC (Spain)

d UNIVERSITAT AUTÒNOMA DE BARCELONA (Spain)

Author keywords

Infrared spectroscopy; Ion implantation; Radiation damage

Indexed keywords

INFRARED SPECTROSCOPY; ION IMPLANTATION; RADIATION DAMAGE; REFRACTIVE INDEX; ANNEALING; POSITIVE IONS; RAMAN SCATTERING;

EFFECTIVE MEDIUM; HIGH DOSE; IMPLANTATION DAMAGE; IMPLANTED LAYERS; INFRARED REFLECTIVITY SPECTRA; LO FREQUENCY; RESTSTRAHLEN BAND;

SILICON CARBIDE;

EID: 0036433978 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.389-393.859 Document Type: Conference Paper

Times cited : (6)

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