A novel P-channel NAND-type flash memory with 2-bit/cell operation and high programming throughput (>20 MB/sec)

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 331-334

  Lue, Hang Ting ^a   Wang, Szu Yu ^b   Lai, Erh Kun ^a   Wu, Min Ta ^a   Yang, Ling Wu ^b   Chen, Kuang Chao ^b   Ku, Joseph ^b   Hsieh, Kuang Yeu ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a Emerging Central Lab   (Taiwan)

^b MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER PROGRAMMING; DATA REDUCTION; DATA STORAGE EQUIPMENT; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; ENERGY GAP;

BAND-TO-BAND TUNNELING HOT ELECTRON (BBHE); DATA RETENTION; DEPLETION MODE DEVICE;

PROM;

EID: 33847740278     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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6. H. T. Lue, Y. H. Shih, K. Y. Hsieh, R. Liu, and C. Y. Lu, "Novel soft erase and re-fill methods for a P+-poly gate nitride-trapping non-volatile memory device with excellent endurance and retention properties", Proceedings 2005 International Reliability Physics Symposium (IRPS), session 2D-3, pp. 168-174, 2005.
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