A high-performance multi-level NAND flash memory with 43nm-node floating-gate technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 445-448

  Noguchi, M ^a   Yaegashi, T ^a   Koyama, H ^a   Morikado, M ^a   Ishibashi, Y ^a   Ishibashi, S ^a   Ino, K ^a   Sawamura, K ^a   Aoi, T ^a   Maruyama, T ^a   Kajita, A ^a   Ito, E ^a   Kishida, M ^a   Kanda, K ^a   Hosono, K ^a   Miyamoto, S ^a   Ito, F ^b   Hirata, Y ^b   Hemink, G ^b   Higashitani, M ^b   Mak, A ^b   Chan, J ^b   Koyanagi, M ^a   Ohshima, S ^a   Shibata, H ^a   Tsunoda, H ^a   Tanaka, S ^a   more..

^a TOSHIBA CORPORATION   (Japan)

^b SanDisk Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; COPPER; DIELECTRIC FILMS; ELECTRON DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); TECHNOLOGY; TRANSITION METALS;

BIT LINES; FLOATING GATES; GATE DIELECTRIC FILMS; MULTI-LEVEL; MULTI-LEVEL PROGRAMMING; NAND FLASH MEMORIES; WORD LINES;

FLASH MEMORY;

EID: 50249112665     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418969     Document Type: Conference Paper

References (3)

1. st NVSMW, pp. 9-11(2006).
2. 3-TaN) cell technology", Technical Digest of IEDM, pp. 29-32 (2006).
3. th NVSMW, pp. 65-66 (2003).