Morphological, electrical, and optical properties of InN grown by hydride vapor phase epitaxy on sapphire and template substrates

Journal of Applied Physics

Volumn 99, Issue 11, 2006, Pages

  Song, D Y ^a   Kuryatkov, V ^a   Basavaraj, M ^a   Rosenbladt, D ^a   Nikishin, S A ^a   Holtz, M ^a   Syrkin, A L ^b   Usikov, A S ^b   Ivantsov, V A ^b   Dmitriev, V A ^b  

^a TEXAS TECH UNIVERSITY   (United States)

^b TDI Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C -PLANE SAPPHIRE SUBSTRATES; FREE-CARRIER CONCENTRATION; HYDRIDE VAPOR PHASE EPITAXY;

EPITAXIAL GROWTH; GALLIUM NITRIDE; REFRACTIVE INDEX; SAPPHIRE; VAPOR PHASE EPITAXY; X RAY ANALYSIS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33745287856     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2201856     Document Type: Article

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