Carrier localization in InN epilayers grown on Si substrates

Solid State Communications

Volumn 141, Issue 3, 2007, Pages 109-112

  Shu, G W ^a   Lo, M H ^a   Yang, M D ^a   Hsu, C L ^a   Shen, J L ^a   Lan, S M ^b  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

Author keywords

A. Semiconductors; D. Optical properties

Indexed keywords

ELECTRONS; IMPURITIES; PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICES; SUBSTRATES;

CARRIER LOCALIZATION; CONDUCTION BAND; EMISSION ENERGY; TEMPERATURE DEPENDENCE;

INDIUM COMPOUNDS;

EID: 33751410047     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2006.10.022     Document Type: Article

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