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Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 24, 2000, Pages 16600-16604

Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and Ga1-xInxAsySb1-y/GaSb (0.07≤x≤0.22, 0.05≤y≤0.19) quaternary alloys using infrared photoreflectance

(5) Muñoz, Martín a Pollak, Fred H a Zakia, M B b Patel, N B b Herrera Perez J L c

a CITY UNIVERSITY OF NEW YORK (United States)

b UNIVERSITY OF CAMPINAS (Brazil)

c INSTITUTO POLITÉCNICO NACIONAL (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY; ANTIMONY; ARSENIC; GALLIUM; INDIUM;

ARTICLE; ENERGY TRANSFER; INFRARED SPECTROPHOTOMETRY; MATHEMATICAL ANALYSIS; MOLECULAR PHYSICS; REFLECTOMETRY; SEMICONDUCTOR; TEMPERATURE DEPENDENCE;

EID: 0034670923 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.62.16600 Document Type: Article

Times cited : (45)

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