Effect of Bi2O3 seed layer on crystalline orientation and ferroelectric properties of Bi3.25 La0.75Ti 3O12 thin films prepared by rf-magnetron sputtering method

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Yunyi, Wu ^a   Duanming, Zhang ^a   Jun, Yu ^a   Yunbo, Wang ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCEDURES; APPLIED VOLTAGES; BLT FILMS; BLT THIN FILMS; COERCIVE VOLTAGES; CRYSTALLINE ORIENTATIONS; CURRENT RESISTANCES; FATIGUE ENDURANCES; FERROELECTRIC PROPERTIES; GRAIN BOUNDARY DENSITIES; GRAIN SIZES; PREFERENCE ORIENTATIONS; PREFERENTIAL ORIENTATIONS; PT (1 1 1); PT FILMS; REMNANT POLARIZATIONS; RF- MAGNETRON SPUTTERING; SEED LAYERS; SI SUBSTRATES; STRUCTURAL AND ELECTRICAL PROPERTIES; STRUCTURE FILMS; SWITCHING CYCLES; TWO-STEP ANNEALING; X-RAY DIFFRACTION PATTERNS;

DIFFRACTION; ELECTRIC PROPERTIES; FERROELECTRICITY; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HOLOGRAPHIC INTERFEROMETRY; LANTHANUM; MAGNETRONS; PLATINUM; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILMS;

FILM PREPARATION;

EID: 63749104699     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3055362     Document Type: Article

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