Retention characteristics of V-doped Bi3.25La 0.75Ti3O12 thin film

Ceramics International

Volumn 30, Issue 7, 2004, Pages 1565-1568

  Kim, Jin Soo ^a   Ahn, Chang Won ^a   Lee, Hai Joon ^a   Lee, Sun Young ^a   Kim, Ill Won ^a   Bae, Jong Sung ^b   Jeong, Jung Hyun ^b  

^a University of Ulsan   (South Korea)

^b Pukyong National University   (South Korea)

Author keywords

A. Films; BLT; C. Ferroelectric properties; FRAM; Retention

Indexed keywords

BISMUTH COMPOUNDS; DOPING (ADDITIVES); FERROELECTRIC MATERIALS; HYSTERESIS; LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; PEROVSKITE; POLARIZATION; PULSED LASER DEPOSITION; TITANIUM COMPOUNDS; VANADIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

BLT; FRAM (FERROELECTRIC RANDOM ACCESS MEMORY); LOGARITHMIC DECAY; RETENTION;

THIN FILMS;

EID: 4344716083     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2003.12.099     Document Type: Conference Paper

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