Surface and interface reactions of sputtered TiNi/Si thin films

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Kumar, A K Nanda ^a   Jayakumar, S ^a   Kannan, M D ^a   Rajagopalan, S ^b   Balamurugan, A K ^b   Tyagi, A K ^b   Kumar, Sanjeev ^c   Reddy, G L N ^c   Ramana, J V ^c   Raju, V S ^c  

^a PSG COLLEGE OF TECHNOLOGY   (India)

^b INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

^c National Centre for Compositional Characterisation of Materials   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ANALYSIS; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SPECTROMETERS; SPECTROMETRY; SURFACE REACTIONS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

COMPOSITION DISTRIBUTIONS; FORMATION MECHANISMS; GRAZING INCIDENCE X-RAY DIFFRACTION ANALYSIS; HIGH TEMPERATURES; INTERFACIAL CHEMICALS; NICKEL SILICIDES; NUCLEATION AND GROWTHS; RUTHERFORD BACKSCATTERING SPECTROMETRIES; SECONDARY IONIZATIONS; SI (100) SUBSTRATES; SI SUBSTRATES; SURFACE AND INTERFACES; TI-NI THIN FILMS;

SUBSTRATES;

EID: 63749083042     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3082126     Document Type: Article

References (25)

1. E. Makino, T. Mitsuya, and T. Shibata, Sens. Actuators, A 0924-4247 10.1016/S0924-4247(99)00290-3 79, 251 (2000).
2. M. Kohl, D. Dittmann, E. Quandt, and B. Winzek, Sens. Actuators, A 0924-4247 10.1016/S0924-4247(99)00386-6 83, 214 (2000).
3. M. Kohl, E. Just, W. Pfleging, and S. Miyazaki, Sens. Actuators, A 0924-4247 10.1016/S0924-4247(99)00385-4 83, 208 (2000).
4. Y. Liu, M. Kohl, K. Otsuka, and S. Miyazaki, Mater. Sci. Eng., A 0921-5093 10.1016/j.msea.2003.10.369 378, 205 (2004).
5. Y. Q. Fu, S. Zhang, M. J. Wu, W. M. Huang, H. J. Du, J. K. Luo, A. J. Flewitt, and W. I. Milne, Thin Solid Films 515, 80 (2006).
6. K. Nakamura, K. Yoshihara, and K. Saito, Thin Solid Films 144, 93 (1986).
7. I. Jarrige, P. Holliger, T. P. Nguyen, J. Ip, and P. Jonnard, Microelectron. Eng. 70, 251 (2003).
8. L. Zhang, C. Xie, and J. Wu, Mater. Charact. 58, 471 (2007). 1044-5803
9. Y. Fu, H. Du, S. Zhang, and W. Huang, Mater. Sci. Eng., A 0921-5093 10.1016/j.msea.2005.04.036 403, 25 (2005).
10. I. P. Nikitina, K. V. Vassilevski, A. B. Horsfall, N. G. Wright, A. G. O'Neill, C. M. Johnson, T. Yamamoto, and R. K. Malhan, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/21/7/013 21, 898 (2006).
11. N. Frantz, E. Dufour-Gergam, J. P. Grandchamp, A. Bosseboeuf, W. Seiler, G. Nouet, and G. Catillon, Sens. Actuators, A 99, 59 (2002).
12. S. Stemmer, G. Duscher, C. Scheu, A. H. Heuer, and M. Ruhle, J. Mater. Res. 12, 1734 (1997).
13. I. Jarrige, P. Holliger, and P. Jonnard, Thin Solid Films 0040-6090 10.1016/j.tsf.2003.12.039 458, 314 (2004).
14. K. S. S. Eswar Raju, S. Bysakh, M. A. Sumesh, S. V. Kamat, and S. Mohan, Mater. Sci. Eng., A 476, 267 (2007).
15. K. N. Tu, W. K. Chu, and J. W. Mayer, Thin Solid Films 0040-6090 10.1016/0040-6090(75)90058-9 25, 403 (1975).
16. M. Setton, J. Van der Spiegel, and B. Rothman, J. Mater. Res. 4, 1218 (1989).
17. P. He and D. Liu, Mater. Sci. Eng., A 0921-5093 10.1016/j.msea.2006.08. 019 437, 430 (2006).
18. R. W. Beń, J. Appl. Phys. 61, 1826 (1987).
19. U. Gösele and K. N. Tu, J. Appl. Phys. 66 (6), 2619 (1989).
20. R. Pretorius, Vacuum 0042-207X 10.1016/0042-207X(90)93854-C 41, 1038 (1990).
21. T. Yamada, K. Miura, M. Kajihara, N. Kurokawa, and K. Sakamoto, Mater. Sci. Eng., A 0921-5093 10.1016/j.msea.2004.08.053 390, 118 (2005).
22. P. Gwo-Yan Huang, Chung-Hsin Lu, and T. Wen Hann Sheu, Mater. Sci. Eng., B 107, 39 (2004).
23. A. G. Ramirez, H. Ni, and H. -J. Lee, Mater. Sci. Eng., A 438-440, 703 (2006). 0921-5093
24. U. Gösele and K. N. Tu, J. Appl. Phys. 53 (4), 3252 (1982).
25. R. D. Thompson, K. N. Tu and G. Ottaviani, J. Appl. Phys. 0021-8979 10.1063/1.336186 58, 705 (1985).