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Volumn 458, Issue 1-2, 2004, Pages 314-321

Diffusion processes in NiTi/Si, NiTi/SiO2 and NiTi/Si 3N4 systems under annealing

Author keywords

Diffusion; Interfaces; Secondary ion mass spectrometry (SIMS); X Ray emission

Indexed keywords

ANNEALING; CRYSTALLOGRAPHY; CRYSTALS; DIFFUSION; INTERFACES (MATERIALS); MICROELECTROMECHANICAL DEVICES; SECONDARY ION MASS SPECTROMETRY; SHAPE MEMORY EFFECT; X RAY SPECTROSCOPY;

EID: 2542482093     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.039     Document Type: Article
Times cited : (27)

References (19)
  • 4
    • 11744367887 scopus 로고    scopus 로고
    • and references therein
    • Jonnard P. J. Phys. (Fr) IV. 8:1998;Pr9-33. and references therein.
    • (1998) J. Phys. (Fr) IV , vol.8 , pp. 9-33
    • Jonnard, P.1
  • 7
    • 2542485714 scopus 로고    scopus 로고
    • Ph.D. Thesis, Paris-Sud University, France
    • N. Frantz-Rodriguez, Ph.D. Thesis, Paris-Sud University, France, 2002.
    • (2002)
    • Frantz-Rodriguez, N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.