On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(1 1 over(2, ̄) 0)

Applied Surface Science

Volumn 255, Issue 13-14, 2009, Pages 6535-6539

  Bishop, S M ^a   Reynolds Jr , C L ^a   Molstad, J C ^b   Stevie, F A ^c   Barnhardt, D E ^a   Davis, R F ^d  

^a North Carolina State University   (United States)

^b Maxion Technology   (United States)

^c NORTH CAROLINA STATE UNIVERSITY   (United States)

^d CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

4H SiC; Cathodoluminescence; Chemical vapor deposition processes hot wall epitaxy and sublimation epitaxy; Impurity luminescence; Interfacial impurities; Secondary ion mass spectrometry

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; CONDUCTION BANDS; EPITAXIAL GROWTH; IMPURITIES; INTELLIGENT SYSTEMS; INTERFACES (MATERIALS); MONTE CARLO METHODS; NITROGEN; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SUBLIMATION; VALENCE BANDS;

4H-SIC; ALUMINUM CONCENTRATION; ELECTRON BEAM ENERGY; ELECTRON TRAJECTORY SIMULATIONS; FILM-SUBSTRATE INTERFACES; HOT-WALL EPITAXY; IMPURITY CONCENTRATION; INTERFACIAL IMPURITIES;

SILICON CARBIDE;

EID: 63449136847     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.02.036     Document Type: Article

References (20)

1. Järrendahl K., and Davis R.F. In: Park Y.S. (Ed). SiC Materials and Devices, Semiconductors and Semimetals vol. 52 (1998), Academic Press, San Diego 1-20
2. Bishop S.M., Reynolds Jr. C.L., Liliental-Weber Z., Uprety Y., Ebert C.W., Stevie F.A., Park J.-S., and Davis R.F. J. Cryst. Growth 311 (2008) 72-78
3. Burk Jr. A.A., and Rowland L.B. Appl. Phys. Lett. 68 (1996) 382
4. Clemen L.L., Devaty R.P., MacMillan M.F., Yoganathan M., Choyke W.J., Larkin D.J., Powell J.A., Edmond J.A., and Kong H.S. App. Phys. Lett. 62 (1993) 2953
5. Kakanakova-Georgieva A., Yakimova R., Syväjärvi M., and Janzén E. Appl. Surf. Sci. 184 (2001) 242
6. Kalinina E., Kholujanov G., Zubrilov A., Solov'ev V., Davydov D., Tregubova A., Sheglov M., Kovarskii A., Yagovkina M., Violina G., Pensl G., Hallén A., Konstantinov A., Karlsson S., Rendakova S., and Dmitriev V. J. Appl. Phys. 90 (2001) 5402
7. Kakanakova-Georgieva A., Yakimova R., Henry A., Linnarsson M.K., Syväjärvi M., and Janzén E. J. Appl. Phys. 91 (2002) 2890
8. Nordell N., Bowallius O., Anand S., Kakanakova-Georgieva A., Yakimova R., Madsen L.D., Karlsson S., and Konstantinov A.O. Appl. Phys. Lett. 80 (2002) 1755
9. Hidalgo P., Ottaviani L., Idrissi H., Lancin M., Martinuzzi S., and Pichaud B. Eur. Phys. J.-Appl. Phys. 27 (2004) 231
10. Díaz-Guerra C., and Piqueras J. Eur. Phys. J.-Appl. Phys. 27 (2004) 227
11. Ottaviani L., Hidalgo P., Idrissi H., Lancin M., Martinuzzi S., and Pichaud B. J. Phys.-Condens. Matter 16 (2004) S107
12. Castaldini A., Cavallini A., Polenta L., Nava F., Canali C., and Lanzieri C. Appl. Surf. Sci. 187 (2002) 248
13. http://www.gel.usherbrooke.ca/casino/ (software URL).
14. Drouin D., Couture A.R., Joly D., Tastet X., Aimez V., and Gauvin R. Scanning 29 (2007) 92
15. Pivovarov A.L., Stevie F.A., Griffis D.P., and Guryanov G.M. J. Vac. Sci. Technol. A21 (2003) 1649
16. C.M. Parish, Ph.D. Dissertation, North Carolina State University, 2006.
17. Parish C.M., and Russell P.E. Adv. Imag. Elect. Phys. 147 (2007) 2
18. Goldberg Y., Levinshtein M., and Rumyantsev S. In: Levinshtein M.E., Rumyantsev S.L., and Shur M.S. (Eds). Properties of Advanced Semiconductor Materials (2001), Wiley Interscience, New York 93-147
19. Toth M., and Phillips M.R. Scanning 20 (1998) 425
20. Solymar R., and Walsh D. Electrical Properties of Materials. 6th ed. (1998), Oxford University Press, New York