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EPJ Applied Physics

Volumn 27, Issue 1-3, 2004, Pages 227-230

Cathodoluminescence microscopy and spectroscopy of n-type 4H-SiC epilayers

(2) Diaz Guerra C a Piqueras, J a

a UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CHARGE COUPLED DEVICES; CONVOLUTION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON BEAMS; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; IMAGE ANALYSIS; IMPURITIES; MONOCHROMATORS; NONDESTRUCTIVE EXAMINATION; SCANNING ELECTRON MICROSCOPY; SPECTROMETERS; STACKING FAULTS; THERMAL CONDUCTIVITY;

IONOLUMINESCENCE; OPTICAL METHODS; OTHER SEMICONDUCTORS;

SILICON CARBIDE;

EID: 10244259109 PISSN: 12860042 EISSN: None Source Type: Journal
DOI: 10.1051/epjap:2004091 Document Type: Conference Paper

Times cited : (5)

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