Structural, electrical, and optical properties of low-doped 4H-SiC chemical vapor deposited epitaxial layers

Journal of Applied Physics

Volumn 90, Issue 10, 2001, Pages 5402-5409

  Kalinina, E ^a   Kholujanov, G ^a   Zubrilov, A ^a   Solov'ev, V ^a   Davydov, D ^a   Tregubova, A ^a   Sheglov, M ^a   Kovarskii, A ^b   Yagovkina, M ^b   Violina, G ^c   Pensl, G ^d   Hallen A ^e   Konstantinov, A ^f   Karlsson, S ^f   Rendakova, S ^g   Dmitriev, V ^g  

^a IOFFE INSTITUTE   (Russian Federation)

^b Mekhanobr Analyt Co   (Russian Federation)

^c SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI   (Russian Federation)

^d UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^e ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^f ACREO AB   (Sweden)

^g TDI Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035890793     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1406971     Document Type: Article

References (19)

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