Structural characterization of 6H- and 4H-SIC polytypes by means of cathodoluminescence and x-ray topography

Journal of Physics Condensed Matter

Volumn 16, Issue 2, 2004, Pages

  Ottaviani, L ^a   Hidalgo, P ^a,b   Idrissi, H ^a   Lancin, M ^a   Martinuzzi, S ^a   Pichaud, B ^a  

^a AIX MARSEILLE UNIVERSITY   (France)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); LIGHT ABSORPTION; PHOTOLUMINESCENCE; PHOTONS; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SURFACE TOPOGRAPHY; THRESHOLD VOLTAGE; VECTORS; X RAY ANALYSIS;

BURGERS VECTORS; RADIATIVE RECOMBINATION;

SILICON CARBIDE;

EID: 0442295427     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/2/013     Document Type: Conference Paper

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