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Volumn 27, Issue 1-3, 2004, Pages 231-233
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Structural characterisation of (112̄0) 4H-SiC substrates by cathodoluminescence and X-ray topography
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Author keywords
[No Author keywords available]
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Indexed keywords
CATHODOLUMINESCENCE;
CRYSTAL DEFECTS;
CRYSTAL GROWTH;
CRYSTAL IMPURITIES;
CRYSTAL ORIENTATION;
DISLOCATIONS (CRYSTALS);
DOPING (ADDITIVES);
MICROSTRUCTURE;
MOSFET DEVICES;
SCANNING ELECTRON MICROSCOPY;
SILICON CARBIDE;
SILICON WAFERS;
TEMPERATURE CONTROL;
THRESHOLD VOLTAGE;
DEFECTS AND IMPURITIES IN CRYSTALS;
DIRECT OBSERVATION OF DISLOCATIONS AND OTHER DEFECTS;
IONOLUMINESCENCE;
X-RAY TOPOGRAPHY;
SEMICONDUCTOR MATERIALS;
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EID: 10244267433
PISSN: 12860042
EISSN: None
Source Type: Journal
DOI: 10.1051/epjap:2004100 Document Type: Conference Paper |
Times cited : (2)
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References (9)
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