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Volumn 27, Issue 1-3, 2004, Pages 231-233

Structural characterisation of (112̄0) 4H-SiC substrates by cathodoluminescence and X-ray topography

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); MICROSTRUCTURE; MOSFET DEVICES; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SILICON WAFERS; TEMPERATURE CONTROL; THRESHOLD VOLTAGE;

EID: 10244267433     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2004100     Document Type: Conference Paper
Times cited : (2)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.