Optimization of secondary ion mass spectrometry detection limit for N in SiC

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 5, 2003, Pages 1649-1654

  Pivovarov, A L ^a   Stevie, F A ^a   Griffis, D P ^a   Guryanov, G M ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b Corning Incorporated ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS; NITROGEN; SILICON CARBIDE; THIN FILMS;

ION-EXTRACTED AREA;

SECONDARY ION MASS SPECTROMETRY;

EID: 0142122298     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1595108     Document Type: Conference Paper

References (13)

1. Sputtering by Particle Bombardment III, edited by R. Behrisch and K. Wittmaaek (Springer, New York, 1991), p. 238.
2. Y. Homma and Y. Ishii, J. Vac. Sci. Technol. A 3, 356 (1985).
3. J. Kobayashi, M. Nakajima, and K. Ishida, J. Vac. Sci. Technol. A 6, 86 (1988).
4. J. Kobayashi, M. Nakajima, and K. Ishida, J. Vac. Sci. Tecnol. A 7, 2542 (1989).
5. M. Meuris, W. Vandervost, and G. Borghs, J. Vac. Sci. Technol. A 7, 1663 (1989).
6. Beam Effects, Surface Topography, and Depth Profiling in Surface Analysis, edited by A. W. Czanderna, T. E. Madey, and C. J. Powell (Plenum, New York, 1998), p. 394.
7. R. G. Wilson, S. W. Novak, and J. C. Norberg, in Secondary Ion Mass Spectrometry, SIMS VI, edited by A. Benninghoven, A. M. Huber, and H. W. Werner (Wiley, New York, 1988), p. 339.
8. T. Achtnich, G. Burri, and M. Ilegems, J. Vac. Sci. Technol. A 7, 2532 (1985).
9. H. Gnaser, Secondary Ion Mass Spectrometry, SIMS XII, edited by A. Benninghoven, P. Bertrand, H.-N. Migeon, and H. W. Werner (Elsevier, New York, 2000), p. 413.
10. H. Gnaser, Appl. Phys. Lett. 79, 497 (2001).
11. H. Yamazaki, J. Vac. Sci. Technol. A 15, 2542 (1997).
12. K. Wittmaack, Appl. Phys. 12, 149 (1977).
13. K. Wittmaack, Appl. Phys. A: Solids Surf. 38, 235 (1985).