Deep levels in silicon carbide Schottky diodes

Applied Surface Science

Volumn 187, Issue 3-4, 2002, Pages 248-252

  Castaldini, A ^a   Cavallini, A ^a   Polenta, L ^a   Nava, F ^b   Canali, C ^b   Lanzieri, C ^c  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b INFM   (Italy)

^c ALENIA SPAZIO   (Italy)

Author keywords

Capture cross section; Deep levels; DLTS; ICTS; Silicon carbide

Indexed keywords

CRYSTAL IMPURITIES; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; SILICON CARBIDE; TRANSPORT PROPERTIES;

ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY (ICTS);

SCHOTTKY BARRIER DIODES;

EID: 0037186177     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00993-X     Document Type: Article

References (16)