Thin copper seed layers in interconnect metallization using the electroless plating process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 8 A, 2004, Pages 5100-5104

  Meen, Teen Hang ^a   Chen, Wen Ray ^a   Huang, Chien Jung ^a   Chiu, Chih Jen ^a  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Copper; Electroless plating; Grain size; Metallization; Silicon

Indexed keywords

ACTIVATION ANALYSIS; CHEMICAL VAPOR DEPOSITION; ELECTROLESS PLATING; ELECTROMIGRATION; ENERGY DISPERSIVE SPECTROSCOPY; GRAIN SIZE AND SHAPE; INTEGRATED CIRCUITS; METALLIZING; PHYSICAL VAPOR DEPOSITION; SEED; SILICON; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

COPPER DEPOSITION; COPPER SEED LAYERS; ELECTROCHEMICAL PLATING (ECP); ELECTROMIGRATION RESISTANCE;

COPPER;

EID: 6344233630     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.5100     Document Type: Article

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