Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide

Applied Physics Letters

Volumn 91, Issue 4, 2007, Pages

  Zhu, F ^a   Koveshnikov, S ^a   Ok, I ^a   Kim, H S ^a   Zhang, M ^a   Lee, T ^a   Thareja, G ^a   Yu, L ^a   Lee, J C ^a   Tsai, W ^b   Tokranov, V ^c   Yakimov, M ^c   Oktyabrsky, S ^c  

^a The University of Texas at Austin   (United States)

^b INTEL CORPORATION   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; HYSTERESIS; MOS DEVICES;

AMORPHOUS SILICON INTERFACE; BULK TRAPS; CHANNEL MOBILITY; GATE STACK;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 34547426948     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2762295     Document Type: Article

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