Reduction of threading dislocation density and suppression of crack formation in InxGa1-xP(x∼0.5) grown on Si(100) using strained short-period superlattices

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 2 SUPPL. B, 1997, Pages

  Takagi, Yasufumi ^a   Yonezu, Hiroo ^a   Uesugi, Shinobu ^a   Ohshima, Naoki ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Crack; Misfit dislocation; Strained short period superlattice (SSPS); Thermal stress

Indexed keywords

COMPOSITION EFFECTS; CRACK INITIATION; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; RESIDUAL STRESSES; SEMICONDUCTING SILICON; SEMICONDUCTOR SUPERLATTICES; THERMAL STRESS; TRANSMISSION ELECTRON MICROSCOPY;

STRAINED SHORT PERIOD SUPERLATTICES (SSPS);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031070201     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.36.L187     Document Type: Article

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