Effects of rapid thermal annealing on optical properties of GaN xP1-x alloys grown by solid source molecular beam epitaxy

Semiconductor Science and Technology

Volumn 20, Issue 5, 2005, Pages 353-356

  Izadifard, M ^a   Buyanova, I A ^a   Bergman, J P ^a   Chen, W M ^a   Utsumi, A ^b   Furukawa, Y ^b   Wakahara, A ^b   Yonezu, H ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC EXCITATION; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUENCHING; RAPID THERMAL ANNEALING;

CARRIER LIFETIME; NON-RADIATIVE CENTERS; ROOM TEMPERATURE (RT); TIME-RESOLVED PL MEASUREMENT;

GALLIUM NITRIDE;

EID: 24144451764     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/5/005     Document Type: Article

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