Highly c -axis oriented thin AlN films deposited on gold seed layer for FBAR devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1474-1479

  Tay, Kok Wan ^a   Huang, Cheng Liang ^b   Wu, Long ^c  

^a WUFENG INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c F tech Corporation   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ELECTRODES; FILM GROWTH; GOLD; MORPHOLOGY; SPUTTERING;

C -AXIS ORIENTATION; FILM THICKNESS; SEED LAYER;

THIN FILMS;

EID: 31144476664     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1941249     Document Type: Article

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