Growth and optical properties of AlN homoepitaxial layers grown by ammonia-source molecular beam epitaxy

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 461-464

  Iwata, Shiro ^a   Nanjo, Yoshiyuki ^a   Okuno, Toshihiro ^a   Kurai, Satoshi ^a   Taguchi, Tsunemasa ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

A1. Crystallites; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

AMMONIA; CRYSTALLITES; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS;

AMMONIA GAS SOURCE (GS); HOMOEPITAXIAL LAYERS; HYDRIDE VAPOR PHASE EPITAXY (HVPE); X-RAY ROCKING CURVES;

EPITAXIAL GROWTH;

EID: 33947319321     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.083     Document Type: Article

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