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Volumn 77, Issue 15, 2000, Pages 2325-2327

Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy

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Indexed keywords


EID: 0001310571     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1315632     Document Type: Article
Times cited : (97)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.