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Volumn 19, Issue 1, 2009, Pages

Monolithic integration of capacitive sensors using a double-side CMOS MEMS post process

Author keywords

[No Author keywords available]

Indexed keywords

ACCELEROMETERS; ETCHING; MEMS; MICROELECTROMECHANICAL DEVICES; PRESSURE SENSORS; PRESSURE TRANSDUCERS; SEMICONDUCTING SILICON COMPOUNDS; TOOLS; WIRELESS TELECOMMUNICATION SYSTEMS;

EID: 62649108958     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/19/1/015023     Document Type: Article
Times cited : (29)

References (16)
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    • Post-CMOS processing for high-aspect-ratio integrated silicon microstructures
    • Xie H, Erdmann L, Zhu X, Gabriel K J and Fedder G K 2002 Post-CMOS processing for high-aspect-ratio integrated silicon microstructures IEEE/ASME J. MEMS 11 93-101
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    • Novel fully CMOS-compatible vaccuum sensor
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    • Paul, O.1    Baltes, H.2
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    • 3-D nonlinear modelling of microhotplates in CMOS technology for use as metal-oxide-based gas sensors
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    • A merged MEMS-CMOS. process using silicon wafer bonding
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.