Impact of body-thickness-dependent band structure on scaling of double-gate MOSFETs: A DFT/NEGF study

IEEE Transactions on Nanotechnology

Volumn 8, Issue 2, 2009, Pages 159-166

  Martinez, Antonio ^a   Kalna, Karol ^a   Sushko, Peter V ^b   Shluger, Alex L ^b   Barker, John R ^a   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

2 D band structure; 2D bandstructure; Density functional theory (DFT); Double gate nanoMOSFETs; Double gate (DG) nano MOSFETs; Electron transport; Non Equilibrium Green's Functions; Nonequilibrium Green's functions

Indexed keywords

BAND STRUCTURE; DIFFERENTIAL EQUATIONS; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; GALERKIN METHODS; GREEN'S FUNCTION; MOSFET DEVICES; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING SILICON COMPOUNDS;

2-D BAND STRUCTURE; DENSITY FUNCTIONAL THEORY (DFT); DOUBLE GATE NANOMOSFETS; DOUBLE-GATE (DG) NANO-MOSFETS; ELECTRON TRANSPORT; NON-EQUILIBRIUM GREEN'S FUNCTIONS;

DENSITY FUNCTIONAL THEORY;

EID: 62449242024     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2008.917776     Document Type: Article

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