A study of the effect of the interface roughness on a DG-MOSFET using a full 2D NEGF technique

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 613-616

  Martinez, A ^a   Svizhenko, A ^b   Anantram, M P ^b   Barker, J R ^a   Brown, A R ^a   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b NASA AMES RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GREEN'S FUNCTION; INTERFACES (MATERIALS); POISSON EQUATION; SURFACE ROUGHNESS; THRESHOLD VOLTAGE;

DOUBLE GATE NANO MOSFETS; INHOMOGENEITIES; NON-EQUILIBRIUM GREEN'S FUNCTION (NEGF);

MOSFET DEVICES;

EID: 33847758238     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. A. R. Brown, F. Adamu-Lema and A. Asenov, "Intrinsic Parameter Fluctuations in Nanometre Scale Thin-body SOI Devices Introduced by Interface Roughness", Superlattices and Microstructures, Vol.34, pp.283-291, 2003
2. J. R. Watling, L. Yang, M. Boriçi, R. C. W. Wilkins, A. Asenov, J. R. Barker and S. Roy, "The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs", Solid-State Electronics, Vol. 48, pp.1337-1346, 2004
3. J. Fonseca and S. Kaya, "Accurate treatment of interface roughness in nanoscale DG MOSFETs using non-equilibrium green's functions", Solid-State Electronics, Vol. 48, pp.1843-1847, 2004
4. A. Svizhenko, M. P. Anantram, T. R Govindan and B. Siegel, "Two-dimensional quantum mechanical modeling of nanotransistors", J. App. Phys., Vol.91, p.2343, 2002
5. A. Asenov, S. Kaya, J. H. Davies, "Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations", IEEE Trans. Electron Dev., Vol.49, pp.112-119, 2002