Analysis of silicon dioxide interface transition region in MOS structures

2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Volumn , Issue , 2007, Pages 149-152

  Markov, S ^a,b   Barin, N ^b   Fiegna, C ^b   Roy, S ^a   Sangiorgi, E ^b   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; SEMICONDUCTOR DEVICES; SILICA; SILICON OXIDES; WAVE FUNCTIONS;

BAND GAP TRANSITION; GATE CAPACITANCE; INTERFACE TRANSITIONS; MOS STRUCTURE; OXIDE THICKNESS; SI/SIO2 INTERFACE; TUNNELLING CURRENT DENSITIES; WAVE FUNCTION PENETRATION;

ENERGY GAP;

EID: 62449153881     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1007/978-3-211-72861-1_36     Document Type: Conference Paper

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