Luminescence energy and carrier lifetime in inGaN/GaN quantum wells as a function of applied biaxial strain

Journal of Applied Physics

Volumn 94, Issue 7, 2003, Pages 4520-4529

  Shapiro, N A ^a   Feick, H ^a,b   Hong, W ^a   Cich, M ^a   Armitage, R ^a   Weber, E R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b CENTER OF ADVANCED EUROPEAN STUDIES AND RESEARCH CAESAR   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; FERMI LEVEL; GALLIUM NITRIDE; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

CARRIER SEPARATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0142120856     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1607521     Document Type: Article

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