High-power blue-violet laser diode fabricated on a GaN substrate

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5365, Issue , 2004, Pages 282-287

  Shono, Masayuki ^a   Nomura, Yasuhiko ^a   Bessho, Yasuyuki ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

Blue violet laser diode; Far field pattern; High power; Kink level; Low noise; Nitride based semiconductor

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM; LASERS; NATURAL FREQUENCIES; OPTIMIZATION; PHASE MODULATION; SEMICONDUCTOR QUANTUM WELLS; VAPOR PHASE EPITAXY;

BLUE-VIOLET LASER DIODES; FAR FIELD PATTERNS (FFP); HIGH POWER; KINK LEVEL; LOW NOISE; NITRIDE-BASED SEMICONDUCTORS;

SEMICONDUCTOR LASERS;

EID: 3543126498     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.533186     Document Type: Conference Paper

References (5)

1. T. Nishihara, H. Kitamura, R. Kojima, N. Miyagawa, T. Akiyama, K. Nishiuchi and N. Yamada, "Rewritable 2×-Speed Dual Layer Blu-Ray Disc", Tech. Digest of Int. Symp. on Optical Memory 2003, Tomoyuki Toshima, pp. 8-9, c/o Business Center for Academic Societies Japan, Nara, 2003.
2. T. Nakai, T. Tsukamoto, S. Ashida, K. Yusu, K. Ichihara, N. Yoshida, N. Ohmachi, N. Morishita and N. Nakamura, "Dual-Layer Phase Change Recording Media for System with NA of 0.65 and Light Incidence on 0.6 mm Thick-Substrate", Tech. Digest of Int. Symp. on Optical Memory 2003, Tomoyuki Toshima, pp. 14-15, c/o Business Center for Academic Societies Japan, Nara, 2003.
3. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano and K. Chocho, "InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices Grown on An Epitaxially Laterally Overgrown GaN Substrate", Appl. Phys. Lett., 72, pp.211-213, 1998.
4. T. Tojyo, S. Uchida, T. Mizumoto, T. Asano, M. Takeya, T. Hino, S. Kijima, S. Goto, Y. Yabuki and M. Ikeda, "High-Power AlGaInN Laser Diodes with High King Level and Low Relative Intensity Noise", Jpn. J. Appl. Phys., 41, pp. 1829-1833, 2002.
5. S. Nakamura, "Development and Future Prospects of InGaN-based LEDs and LDs", Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes, S. Nakamura and S. F. Chichibu, pp. 317-350, Taylor & Francis, London, 2000.