The charge transport mechanism in silicon nitride: Multi-phonon trap ionization

Solid-State Electronics

Volumn 53, Issue 3, 2009, Pages 251-255

  Vishnyakov, A V ^a   Novikov, Yu N ^a   Gritsenko, V A ^a   Nasyrov, K A ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF AUTOMATION AND ELECTROMETRY   (Russian Federation)

Author keywords

Charge transport; Multi phonon mechanism; Silicon nitride

Indexed keywords

IONIZATION; OXIDE SUPERCONDUCTORS; PHONONS; SILICON NITRIDE;

AMORPHOUS SILICON NITRIDES; CHARGE TRANSPORT; CHARGE TRANSPORT MECHANISMS; ESCAPE FACTORS; EXPERIMENTAL DATUM; MEASURED DATUM; MULTI-PHONON MECHANISM; THEORETICAL CALCULATIONS; THEORETICAL PREDICTIONS;

AMORPHOUS SILICON;

EID: 61349103643     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.07.005     Document Type: Article

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