Simulation of electronic structure of Si-Si bond traps in oxide/nitride/oxide structure

Microelectronics Reliability

Volumn 38, Issue 9, 1998, Pages 1457-1464

  Gritsenko, V A ^a,c   Novikov, Yu N ^a   Morokov, Yu N ^b   Wong, H ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF COMPUTATIONAL TECHNOLOGIES   (Russian Federation)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRONIC STRUCTURE; ELECTRONS; HOLE TRAPS; SILICON NITRIDE;

CHARGED DIAMAGNETIC DEFECT PAIRS; SILICON OXIDE NITRIDE OXIDE STRUCTURE;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0032157568     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00047-X     Document Type: Article

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