Capturing Properties of a Threefold Coordinated Silicon Atom in Silicon Nitride: Positive Correlation Energy Model

Physics of the Solid State

Volumn 45, Issue 11, 2003, Pages 2031-2035

  Gritsenko, V A ^a   Novikov, Yu N ^a   Shaposhnikov, A V ^a   Wong, H ^b   Zhidomirov, G M ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b Department of Electronic Engineering ^*  (Hong Kong)

^c BORESKOV INSTITUTE OF CATALYSIS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345149544     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1626733     Document Type: Article

References (41)

1. N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials, 2nd ed. (Clarendon, Oxford, 1979; Mir, Moscow, 1982).
2. W. L. Warren, J. Kanicki, J. Robertson, et al., J. Appl. Phys. 74, 4034 (1993).
3. V. A. Gritsenko, Structure and Electronic Properties of Amorphous Dielectrics in Silicon MIS Structures (Nauka, Novosibirsk, 1993).
4. V. A. Gritsenko, in Silicon Nitride in Electronics, Ed. by A. V. Rzhanov (Elsevier, New York, 1988).
5. H. Bachofer, H. Reisinger, E. Bertagnolli, and H. von Philipsborn, J. Appl. Phys. 89, 2791 (2001).
6. J. Bu and M. H. White, Solid State Electron. 45, 113 (2001).
7. B. Eitan, P. Pavan, I. Bloom, et al., IEEE Electron Device Lett. 21, 543 (2000).
8. Y. Yang and M. H. White, Solid State Electron. 44, 949 (2000).
9. S. Fujita and A. Sasaki, J. Electrochem. Soc. 132, 398 (1985).
10. V. A. Gritsenko and A. D. Milov, Pis'ma Zh. Éksp. Teor. Fiz. 64, 489 (1996) [JETP Lett. 64, 531 (1996)].
11. V. A. Gritsenko and A. D. Milov, Pis'ma Zh. Éksp. Teor. Fiz. 64, 489 (1996) [JETP Lett. 64, 531 (1996)].
12. W. L. Warren and P. M. Lenahan, Phys. Rev. B 42, 1773 (1990).
13. P. W. Anderson, Phys. Rev. Lett. 34, 953 (1975).
14. R. A. Street and N. F. Mott, Phys. Rev. Lett. 35, 1293 (1975).
15. J. Robertson, Appl. Phys. Lett. 44, 415 (1984).
16. E. E. Meerson and S. P. Sinitsa, Microelectronics 16, 37 (1987).
17. S. E. Gurri, P. M. Lenahan, D. T. Krick, et al., Appl. Phys. Lett. 56, 1359 (1990).
18. Y. Roizin and L. Tsibeskov, J. Non-Cryst. Solids 137-138, 515 (1991).
19. G. Pacchioni and D. Erbetta, Phys. Rev. B 61, 15005 (2000).
20. V. A. Gritsinko, E. E. Meerson, I. V. Travkov, and Yu. V. Goltviansky, Microelectronics 16, 42 (1987).
21. Y. Kamigaki, S. Minami, and H. Kato, J. Appl. Phys. 68, 2211 (1990).
22. V. A. Gritsenko, H. Wong, J. B. Xu, et al., J. Appl. Phys. 86, 3234 (1999).
23. G. Pacchioni, Phys. Rev. Lett. 79, 753 (1997).
24. G. Pacchioni, G. Ierano, and A. M. Marquez, Phys. Rev. Lett. 81, 377 (1998).
25. G. Pacchioni and D. Erbetta, Phys. Rev. B 60, 12617 (1999).
26. C. Fonseca Guerra, J. G. Snijders, G. Te Velde, and E. J. Baerends, Theor. Chem. Acc. 99, 391 (1998).
27. A. D. Becke, Phys. Rev. A 38, 3098 (1988).
28. C. Lee, W. Yang, and R. G. Parr, Phys. Rev. B 37, 785 (1988).
29. J. K. Rudra and W. B. Fowler, Phys. Rev. B 35, 8223 (1987).
30. D. T. Krick, P. M. Lenahan, and J. Kanicki, Phys. Rev. B 38, 8226 (1988).
31. J. Robertson, Philos. Mag. B 69, 307 (1994).
32. T. Umeda, S. Yamasaki, J. Isoya, et al., Phys. Rev. Lett. 77, 4600 (1996).
33. T. Umeda, S. Yamasaki, J. Isoya, and K. Tanaka, Phys. Rev. B 62, 15702 (2000).
34. W. B. Fowler, J. K. Rudra, M. E. Zvanut, and F. J. Feigle, Phys. Rev. B 41, 8313 (1990).
35. W. L. Warren, E. H. Poindexter, M. Offenberg, and W. Muller-Warmuth, J. Electrochem. Soc. 139, 872 (1992).
36. V. A. Gritsenko, J. B. Xu, R. M. Kwok, et al., Phys. Rev. Lett. 35, 1293 (1998).
37. E. Suzuki, Y. Hayashi, and T. Tsuchiya, Appl. Phys. Lett. 42, 608 (1983).
38. Z. A. Weinberg, K. J. Stein, T. N. Nguen, and J. Y. Sun, Appl. Phys. Lett. 57, 1248 (1990).
39. V. A. Gritsenko, Pis'ma Zh. Éksp. Teor. Fiz. 64, 483 (1996) [JETP Lett. 64, 525 (1996)].
40. V. A. Gritsenko, Pis'ma Zh. Éksp. Teor. Fiz. 64, 483 (1996) [JETP Lett. 64, 525 (1996)].
41. Yu. N. Morokov, Yu. N. Novikov, V. A. Gritsenko, and H. Wong, Microelectron. Eng. 48, 175 (1999).