-
1
-
-
60949090978
-
-
International Technology Roadmap for Semiconductors
-
International Technology Roadmap for Semiconductors, 2007.
-
(2007)
-
-
-
3
-
-
0036310063
-
-
10.1143/JJAP.41.227
-
R. Kim, T. Hirose, T. Shano, H. Tsuji, and K. Taniguchi, Jpn. J. Appl. Phys., Part 1 41, 227 (2002). 10.1143/JJAP.41.227
-
(2002)
Jpn. J. Appl. Phys., Part 1
, vol.41
, pp. 227
-
-
Kim, R.1
Hirose, T.2
Shano, T.3
Tsuji, H.4
Taniguchi, K.5
-
4
-
-
0242335691
-
-
10.1063/1.1609640
-
S. Solmi, M. Ferri, M. Bersani, D. Giubertoni, and V. Soncini, J. Appl. Phys. 94, 4950 (2003). 10.1063/1.1609640
-
(2003)
J. Appl. Phys.
, vol.94
, pp. 4950
-
-
Solmi, S.1
Ferri, M.2
Bersani, M.3
Giubertoni, D.4
Soncini, V.5
-
7
-
-
4243706867
-
-
10.1103/PhysRevLett.83.1795
-
J. Xie and S. P. Chen, Phys. Rev. Lett. 83, 1795 (1999). 10.1103/PhysRevLett.83.1795
-
(1999)
Phys. Rev. Lett.
, vol.83
, pp. 1795
-
-
Xie, J.1
Chen, S.P.2
-
10
-
-
0000353554
-
-
10.1063/1.115322
-
D. W. Lawther, U. Myler, P. J. Simpson, P. M. Rousseau, P. B. Griffin, and J. D. Plummer, Appl. Phys. Lett. 67, 3575 (1995). 10.1063/1.115322
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 3575
-
-
Lawther, D.W.1
Myler, U.2
Simpson, P.J.3
Rousseau, P.M.4
Griffin, P.B.5
Plummer, J.D.6
-
12
-
-
33846969134
-
-
10.1063/1.2450663
-
N. Kong, S. K. Banerjee, T. Kirichenko, S. Anderson, and M. Foisy, Appl. Phys. Lett. 90, 062107 (2007). 10.1063/1.2450663
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 062107
-
-
Kong, N.1
Banerjee, S.K.2
Kirichenko, T.3
Anderson, S.4
Foisy, M.5
-
14
-
-
0000574933
-
-
10.1063/1.124331
-
R. Brindos, P. Keys, K. Jones, and M. Law, Appl. Phys. Lett. 75, 229 (1999). 10.1063/1.124331
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 229
-
-
Brindos, R.1
Keys, P.2
Jones, K.3
Law, M.4
-
16
-
-
29744444164
-
-
10.1103/PhysRevB.72.241306
-
Y. A. Du, S. A. Barr, K. R. A. Hazzard, T. J. Lenosky, R. G. Hennig, and J. W. Wilkins, Phys. Rev. B 72, 241306 (R) (2005). 10.1103/PhysRevB.72.241306
-
(2005)
Phys. Rev. B
, vol.72
, pp. 241306
-
-
Du, Y.A.1
Barr, S.A.2
Hazzard, K.R.A.3
Lenosky, T.J.4
Hennig, R.G.5
Wilkins, J.W.6
-
17
-
-
14344268603
-
-
10.1103/PhysRevLett.86.1247
-
S. K. Estreicher, M. Gharaibeh, P. A. Fedders, and P. Ordejon, Phys. Rev. Lett. 86, 1247 (2001). 10.1103/PhysRevLett.86.1247
-
(2001)
Phys. Rev. Lett.
, vol.86
, pp. 1247
-
-
Estreicher, S.K.1
Gharaibeh, M.2
Fedders, P.A.3
Ordejon, P.4
-
19
-
-
10644250257
-
-
10.1103/PhysRev.136.B864
-
P. Hohenberg and W. Kohn, Phys. Rev. 136, B864 (1964). 10.1103/PhysRev.136.B864
-
(1964)
Phys. Rev.
, vol.136
, pp. 864
-
-
Hohenberg, P.1
Kohn, W.2
-
20
-
-
0042113153
-
-
10.1103/PhysRev.140.A1133
-
W. Kohn and L. J. Sham, Phys. Rev. 140, A1133 (1965). 10.1103/PhysRev.140.A1133
-
(1965)
Phys. Rev.
, vol.140
, pp. 1133
-
-
Kohn, W.1
Sham, L.J.2
-
22
-
-
12844286241
-
-
10.1103/PhysRevB.47.558
-
G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993). 10.1103/PhysRevB.47.558
-
(1993)
Phys. Rev. B
, vol.47
, pp. 558
-
-
Kresse, G.1
Hafner, J.2
-
23
-
-
33645898818
-
-
10.1103/PhysRevB.45.13244
-
J. P. Perdew and Y. Wang, Phys. Rev. B 45, 13244 (1992). 10.1103/PhysRevB.45.13244
-
(1992)
Phys. Rev. B
, vol.45
, pp. 13244
-
-
Perdew, J.P.1
Wang, Y.2
-
24
-
-
1842816907
-
-
10.1103/PhysRevB.13.5188
-
H. Monkhorst and J. Pack, Phys. Rev. B 13, 5188 (1976). 10.1103/PhysRevB.13.5188
-
(1976)
Phys. Rev. B
, vol.13
, pp. 5188
-
-
Monkhorst, H.1
Pack, J.2
-
28
-
-
0035893964
-
-
10.1103/PhysRevB.64.235204
-
J.-W. Jeong and A. Oshiyama, Phys. Rev. B 64, 235204 (2001). 10.1103/PhysRevB.64.235204
-
(2001)
Phys. Rev. B
, vol.64
, pp. 235204
-
-
Jeong, J.-W.1
Oshiyama, A.2
-
29
-
-
60949085300
-
-
The formation energy is defined by Ef =E [Si217 As] -217 μSi - μAs, where E [Si217 As] is the total energy of As-interstitial complexes in the 216 atom supercell, μSi is the energy per atom (=E [Si216 /216]) in bulk Si, and μAs is the relative energy per substitutional As atom in defect-free bulk Si (=E [Si215 As] -215 μSi).
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The formation energy is defined by Ef =E [Si217 As] -217 μSi - μAs, where E [Si217 As] is the total energy of As-interstitial complexes in the 216 atom supercell, μSi is the energy per atom (=E [Si216 /216]) in bulk Si, and μAs is the relative energy per substitutional As atom in defect-free bulk Si (=E [Si215 As] -215 μSi).
-
-
-
-
30
-
-
1442360424
-
-
10.1103/PhysRevLett.92.045501
-
D. A. Richie, J. Kim, S. A. Barr, K. R. A. Hazzard, R. Hennig, and J. W. Wilkins, Phys. Rev. Lett. 92, 045501 (2004). 10.1103/PhysRevLett.92.045501
-
(2004)
Phys. Rev. Lett.
, vol.92
, pp. 045501
-
-
Richie, D.A.1
Kim, J.2
Barr, S.A.3
Hazzard, K.R.A.4
Hennig, R.5
Wilkins, J.W.6
-
31
-
-
60949110353
-
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The formation energy is defined by Ef =E [Si216 As2] -216 μSi -2 μAs, where E [Si216 As2] is the total energy of arsenic-interstitial complexes in the 216 atom supercell.
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The formation energy is defined by Ef =E [Si216 As2] -216 μSi -2 μAs, where E [Si216 As2] is the total energy of arsenic-interstitial complexes in the 216 atom supercell.
-
-
-
-
32
-
-
29744433280
-
-
10.1103/PhysRevB.72.155208
-
A. Carvalho, R. Jones, J. Coutinho, and P. R. Briddon, Phys. Rev. B 72, 155208 (2005). 10.1103/PhysRevB.72.155208
-
(2005)
Phys. Rev. B
, vol.72
, pp. 155208
-
-
Carvalho, A.1
Jones, R.2
Coutinho, J.3
Briddon, P.R.4
-
33
-
-
60949096183
-
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Ef1 (Asn Im) =E (Asn Im) - (216+m-n) × μSi -n× μAs.
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Ef1 (Asn Im) =E (Asn Im) - (216+m-n) × μSi -n× μAs.
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60949091155
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Ef2 (Asn Im) =E (Asn Im) - (216-n) × μSi -m× μI -n× μAs, μI =E (Si217) -216× μSi.
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Ef2 (Asn Im) =E (Asn Im) - (216-n) × μSi -m× μI -n× μAs, μI =E (Si217) -216× μSi.
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60949110671
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Ef3 (Asn Im) = Ef2 (Asn Im) + Ef ({311}) per atom
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Ef3 (Asn Im) = Ef2 (Asn Im) + Ef ({311}) per atom.
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-
-
-
36
-
-
0000374534
-
-
10.1103/PhysRevB.55.16186
-
J. Kim, J. W. Wilkins, F. S. Khan, and A. Canning, Phys. Rev. B 55, 16186 (1997). 10.1103/PhysRevB.55.16186
-
(1997)
Phys. Rev. B
, vol.55
, pp. 16186
-
-
Kim, J.1
Wilkins, J.W.2
Khan, F.S.3
Canning, A.4
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