Interaction between interstitials and arsenic-vacancy complexes in crystalline silicon

Applied Physics Letters

Volumn 85, Issue 21, 2004, Pages 4935-4937

  Harrison, Scott A ^a   Edgar, Thomas F ^a   Hwang, Gyeong S ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; ARSENIC; BONDING; COMPLEXATION; CRYSTALLINE MATERIALS; DIFFUSION; PROBABILITY DENSITY FUNCTION; REACTION KINETICS;

ARSENIC-VACANCY COMPLEXES; DENSITY FUNCTIONAL THEORY; INTERSTITIAL-VACANCY (IV) INTERACTIONS; THERMAL ANNEALING;

SILICON;

EID: 19144369909     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1825616     Document Type: Article

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