Enhanced and retarded diffusion of arsenic in silicon by point defect engineering

Applied Physics Letters

Volumn 90, Issue 6, 2007, Pages

  Kong, Ning ^a   Banerjee, Sanjay K ^a   Kirichenko, Taras A ^b   Anderson, Steven G H ^b   Foisy, Mark C ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; DOPING (ADDITIVES); POINT DEFECTS; SEMICONDUCTOR JUNCTIONS;

DOPANT CLUSTERING; INTERSTITIAL-VACANCY RECOMBINATION; ULTRASHALLOW JUNCTIONS;

ARSENIC;

EID: 33846969134     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2450663     Document Type: Article

References (13)

1. A. Sultan, S. K. Banerjee, S. List, and V. McNeil, J. Appl. Phys. 83, 8046 (1998).
2. V. C. Venezia, T. E. Haynes, A. Agarwal, L. Pelaz, H.-J. Gossmann, D. C. Jacobson, and D. J. Eaglesham, Appl. Phys. Lett. 74, 1299 (1999).
3. N. E. B. Cowern, A. J. Smith, B. Colombeau, R. Gwilliam, B. J. Sealy, and E. J. H. Collar, Tech. Dig. - Int. Electron Devices Meet. 2005, 968.
4. M. Ramamoorthy and S. T. Pantelides, Phys. Rev. Lett. 76, 4753 (1996).
5. J. J. Xie and S. P. Chen, Phys. Rev. Lett. 83, 1795 (1999).
6. D. Mathiot and J. C. Pifster, Appl. Phys. Lett. 42, 1043 (1983).
7. S. Solmi, M. Ferri, M. Bersani, D. Guibertoni, and V. Soncini, J. Appl. Phys. 94, 4950 (2003).
8. A. Ural, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 85, 6440 (1999).
9. S. A. Harrison, T. F. Edgar, and G. S. Hwang, Appl. Phys. Lett. 87, 231905 (2005).
10. Suresh Uppal, Arthur F. W. Willoughby, Janet M. Bonar, and Jing Zhang, Appl. Phys. Lett. 85, 552 (2004).
11. R. Kalyanaraman, T. E. Haynes, O. W. Holland, H.-J. L. Gossmann, C. S. Rafferty, and G. H. Gilmer, Appl. Phys. Lett. 79, 1983 (2001).
12. Simulation by UT-MARLOWE code, distributed by the University of Texas at Austin.
13. P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys. 61, 298 (1989).