Interstitial-mediated arsenic clustering in ultrashallow junction formation

Electrochemical and Solid-State Letters

Volumn 9, Issue 12, 2006, Pages 354-357

  Harrison, Scott A ^a   Edgar, Thomas F ^a   Hwang, Gyeong S ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DEACTIVATION; NEUTRAL ARSENIC; VACANCY COMPLEXES;

BINDING ENERGY; CALCULATIONS; CRYSTAL ATOMIC STRUCTURE; ELECTROCHEMISTRY; SILICON;

ARSENIC;

EID: 33750467929     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2359084     Document Type: Article

References (26)

1. P. M. Rousseau, P. B. Griffin, W. T. Fang, and J. D. Plummer, J. Appl. Phys., 84, 3593 (1998).
2. K. C. Pandey, A. Erbil, G. S. Cargill III, and R. F. Boehme, Phys. Rev. Lett., 61, 1282 (1988).
3. M. Ramamoorthy and S. T. Pantelides, Phys. Rev. Lett., 76, 4753 (1996).
4. D. C. Mueller, E. Alonso, and W. Fichtner, Phys. Rev. B, 68, 045208 (2003).
5. D. W. Lawther, U. Myler, P. J. Simpson, P. M. Rousseau, P. B. Griffin, and J. D. Plummer, Appl. Phys. Lett., 67, 3575 (1995).
6. V. Ranki, J. Nissila, and K. Saarinen, Phys. Rev. Lett., 88, 105506 (2002).
7. V. Ranki, K. Saarinen, J. Fage-Pederson, J. Lundsgaard Hansen, and A. Nylandsted Larsen, Phys. Rev. B, 67, 041201 R (2003).
8. R. Pinacho, M. Jaraiz, P. Castrillo, I. Martin-Bragado, J. E. Rubio, and J. Barbolla, Appl. Phys. Lett., 86, 252103 (2005).
9. M. D. Giles, J. Electrochem. Soc., 138, 1160 (1991).
10. A. Ural, P. B. Griffin, and J. D. Plummer, J. Appl. Phys., 85, 6440 (1999).
11. R. Kim, T. Hirose, T. Shano, H. Tsuji, and K. Taniguchi, Jpn. J. Appl. Phys., Part 1, 41, 227 (2002).
12. S. Solmi, M. Ferri, M. Bersani, D. Giubertoni, and V. Soncini, J. Appl. Phys., 94, 4950 (2003).
13. S. A. Harrison, T. F. Edgar, and G. S. Hwang, Appl. Phys. Lett., 87, 231905 (2004).
14. S. A. Harrison, T. F. Edgar, and G. S. Hwang, Appl. Phys. Lett., 85, 4935 (2004).
15. K. S. Jones, D. Downey, H. Miller, J. Chow, M. Puga-Lambers, K. Moller, M. Wright, E. Heitman, J. Glassberg, M. Law, L. Robertson, and R. Brindos, in Proceedings of the International Conference on Ion Implantation Technology, IEEE, p. 841, Piscataway, NJ (1998).
16. R. Brindos, P. Keys, K. S. Jones, and M. E. Law, Appl. Phys. Lett., 75, 229 (1999).
17. J. P. Perdew and Y. Wang, Phys. Rev. B, 45, 13244 (1992).
18. G. Kresse and J. Hafner, Phys. Rev. B 0163-1829 10.1103/PhysRevB.47.558, 47, RC558 (1993); G. Kresse and J. Furthmuller, Phys. Rev. B, 54, 11169 (1996).
19. G. Kresse and J. Hafner, Phys. Rev. B 0163-1829 10.1103/PhysRevB.47.558, 47, RC558 (1993); G. Kresse and J. Furthmuller, Phys. Rev. B, 54, 11169 (1996).
20. D. Vanderbilt, Phys. Rev. B, 41, 7892 (1990).
21. H. J. Monkhorst and J. D. Pack, Phys. Rev. B, 13, 5188 (1976).
22. D. A. Richie, J. Kim, S. A. Barr, K. R. A. Hazzard, R. Hennig, and J. W. Wilkins, Phys. Rev. Lett., 92, 045501 (2004).
23. G. M. Lopez and V. Fiorentini, Phys. Rev. B, 69, 155206 (2004).
24. S. A. Harrison, T. F. Edgar, and G. S. Hwang, Phys. Rev. B, 72, 195414 (2005).
25. P. M. Rousseau, P. B. Griffin, and J. D. Plummer, J. Appl. Phys., 67, 3575 (1998).
26. J. Xie and S. P. Chen, J. Appl. Phys., 87, 4160 (2000).