Electrical characterization of semi-insulating 6H-SiC substrates

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 669-672

  Sanchez, E ^a   Wan, J ^a   Wang, S ^a   Loboda, M ^a   Li, C ^b   Skowronski, M ^b  

^a Dow Corning Corporation   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

6H SiC; Resistivity; Semi insulating

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY; GROWTH KINETICS; MASS SPECTROMETRY; MICROWAVE DEVICES; SECONDARY ION MASS SPECTROMETRY;

6H-SIC; DOPANTS; PHYSICAL VAPOR TRANSPORT (PVT); SEMI-INSULATING;

SILICON CARBIDE;

EID: 8644271666     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.669     Document Type: Conference Paper

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